2
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 400
μAdc)
VGS(th)
2
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 600 mAdc, Measured in Functional Test)
VGS(Q)
3.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2 Adc)
VDS(on)
?
0.27
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
1.8
?
pF
Output Capacitance
(VDS
=
26 Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
600
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 80 W CW, f = 960 MHz
Power Gain
Gps
17
18.5
20
dB
Drain Efficiency
ηD
55
60
?
%
Input Return Loss
IRL
?
-15
-9
dB
Pout
@ 1 dB Compression Point
P1dB
80
90
?
W
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 550 mA, P
out
= 36 W Avg.,
869-894 MHz, 920-960 MHz GSM EDGE Modulation
Power Gain
Gps
?
19
?
dB
Drain Efficiency
ηD
?
42
?
%
Error Vector Magnitude
EVM
?
2.5
?
% rms
Spectral Regrowth at 400 kHz Offset
SR1
?
-63
?
dBc
Spectral Regrowth at 600 kHz Offset
SR2
?
-77
?
dBc
1. Part is internally matched on input.